BC846BPDW1T1 Ver la hoja de datos (PDF) - ON Semiconductor
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BC846BPDW1T1 Datasheet PDF : 10 Pages
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BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
TYPICAL NPN CHARACTERISTICS − BC846
VCE = 5 V
TA = 25°C
2.0
1.0
0.5
0.2
0.1 0.2
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1.0
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
0
0.2
VCE(sat) @ IC/IB = 10
0.5 1.0 2.0 5.0 10 20 50
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
100 200
2.0
TA = 25°C
1.6
20 mA 50 mA 100 mA
200 mA
1.2
0.8
IC =
10 mA
0.4
0
0.02
0.05 0.1
0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10 20
Figure 3. Collector Saturation Region
−1.0
−1.4
−1.8
qVB for VBE
−2.2
−55°C to 125°C
−2.6
−3.0
0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
40
TA = 25°C
20
Cib
10
6.0
4.0
Cob
2.0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
50 100
500
VCE = 5 V
TA = 25°C
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 6. Current−Gain − Bandwidth Product
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