EMD6(2013) Ver la hoja de datos (PDF) - ROHM Semiconductor

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componentes Descripción

Fabricante

EMD6
(Rev.:2013)

NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)

ROHM Semiconductor 

EMD6 / UMD6N / IMD6A

lElectrical characteristic curves(Ta = 25°C) <For DTr1(NPN)>

Data Sheet

Fig.1 Grounded emitter propagation

characteristics

10

VCE=5V

1

0.1

Ta=100ºC

25ºC

-40ºC

0.01

0.001

0

0.5

1

1.5

2

BASE TO EMITTER VOLTAGE : VBE [V]

Fig.2 Grounded emitter output

characteristics

100

IB= 500μA

Ta=25ºC

450μA

400μA

80

350μA

300μA

60

250μA

200μA

40

150μA

100μA

20

50μA

0

0A

0

5

10

COLLECTOR TO EMITTER

VOLTAGE : VCE [V]

Fig.3 DC Current gain

vs. Collector Current

Fig.4 Collector-emitter saturation voltage

vs. Collector Current

COLLECTOR CURRENT : IC [A]

COLLECTOR CURRENT : IC [A]

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3/7

2013.05 - Rev.B

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