EMH11 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
EMH11 Datasheet PDF : 3 Pages
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Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Output current
Collector current
Power
dissipation
EMH11,UMH11N
IMH11A
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
IO
IC (Max.)
Pd
Tj
Tstg
Limits
50
40
−10
50
100
150 (TOTAL)
300 (TOTAL)
150
−55~+150
EMH11 / UMH11N / IMH11A
Unit
V
V
mA
mA
∗1
mW
∗2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input voltage
VI (off)
−
VI (on)
3
−
0.5
VCC=5V, IO=100µA
V
−
−
VO=0.3V, IO=10mA
Output voltage
VO (on)
−
0.1 0.3
V IO/II=10mA/0.5mA
Input current
II
−
− 0.88 mA VI=5V
Output current
IO (off)
−
−
0.5
µA VCC=50V, VI=0V
DC current gain
Transition frequency
Input resistance
GI
30
−
−
− VO=5V, IO=5mA
fT
−
250
−
MHz VCE=10mA, IE=−5mA, f=100MHz ∗
R1
7
10
13
kΩ
−
Resistance ratio
R2/R1 0.8
1
1.2
−
−
∗ Transition frequency of the device
zElectrical characteristic curves
100
VO=0.3V
50
20
10
5
2
1
500m
Ta=−40°C
25°C
100°C
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
10m
VCC=5V
5m
2m
1m
Ta=100°C
25°C
500µ
−40°C
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
0.5
1
1.5
2
2.5
3
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
VO=5V
500
Ta=100°C
200
25°C
−40°C
100
50
20
10
5
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
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