EMH11T2R(2012) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
EMH11T2R
(Rev.:2012)
(Rev.:2012)
ROHM Semiconductor
EMH11T2R Datasheet PDF : 8 Pages
| |||
EMH11 / UMH11N / IMH11A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
EMH11 / UMH11N
IMH11A
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IO
IC(MAX.)*1
PD *2
Tj
Tstg
Data Sheet
Values
Unit
50
V
-10 to +40
V
50
mA
100
mA
150 (Total)*3
mW
300 (Total)*4
mW
150
°C
-55 to +150
°C
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI
Input resistance
R1
Resistance ratio
R2/R1
Conditions
VCC = 5V, IO = 100mA
VO = 0.3V, IO = 10mA
IO / II = 10mA / 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
-
Transition frequency
fT *1
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Min. Typ. Max. Unit
-
-
0.5
V
3.0
-
-
-
0.1
0.3
V
-
-
0.88 mA
-
-
0.5
mA
30
-
-
-
7
10
13
kW
0.8
1
1.2
-
-
250
-
MHz
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© 2012 ROHM Co., Ltd. All rights reserved.
2/7
2012.06 - Rev.B
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