EMH11(2012) Ver la hoja de datos (PDF) - ROHM Semiconductor

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EMH11
(Rev.:2012)

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

ROHM Semiconductor 

EMH11 / UMH11N / IMH11A

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet

Parameter

VCC

IC(MAX.)

R1

R2

Tr1 and Tr2

50V

100mA

10kW

10kW

lFeatures

1) Built-In Biasing Resistors, R1 = R2 = 10kW.

2) Two DTC114E chips in one package.

3) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see inner circuit).

4) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of

completely eliminating parasitic effects.

5) Only the on/off conditions need to be set for

operation, making the circuit design easy.

6) Lead Free/RoHS Compliant.

lOutline

EMT6

(6)

(5)

(1)

(4)

(2)

(3)

EMH11

(SC-107C)

SMT6

(4)

(5)

(6)

(3)

(2)

(1)

IMH11A

SOT-457 (SC-74)

UMT6

(6)

(5)

(4)

(1)

(2)

(3)

UMH11N

SOT-353 (SC-88)

lInner circuit

EMH11 / UMH11N

OUT

IN

GND

(6)

(5)

(4)

IMH11A

OUT

IN

GND

(4)

(5)

(6)

lApplication

Inverter circuit, Interface circuit, Driver circuit

(1)

(2)

GND

IN

(3)

OUT

(3)

(2)

GND

IN

(1)

OUT

lPackaging specifications

Part No.

Package

EMH11

UMH11N

IMH11A

EMT6

UMT6

SMT6

Package

size

(mm)

1616

2021

2928

Taping

code

T2R

TR

T108

Reel size

(mm)

Tape width

(mm)

Basic

ordering

unit (pcs)

180

8

8,000

180

8

3,000

180

8

3,000

Marking

H11

H11

H11

www.rohm.com

© 2012 ROHM Co., Ltd. All rights reserved.

1/7

2012.06 - Rev.B

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