STD6N80K5 Ver la hoja de datos (PDF) - STMicroelectronics

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STD6N80K5

N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in D²PAK, DPAK, I²PAK and TO-220 packages

STMicroelectronics 

STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

VGS

ID

ID

IDM (1)

PTOT

IAR

EAS

dv/dt (2)

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Max current during repetitive or single pulse

avalanche (pulse width limited by Tjmax )

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAS, VDD = 50 V)

Peak diode recovery voltage slope

Tj

Operating junction temperature

Tstg

Storage temperature

1. Pulse width limited by safe operating area.

2. ISD ≤ 4.5 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS

30

4.5

2.8

18

85

1.5

85

4.5

-55 to 150

Unit

V

A

A

A

W

A

mJ

V/ns

°C

Table 3. Thermal data

Symbol

Parameter

Value

D2PAK DPAK I2PAK

Rthj-case Thermal resistance junction-case

1.47

Rthj-amb Thermal resistance junction-amb

Rthj-pcb(1) Thermal resistance junction-pcb

62.50

30

50

1. When mounted on FR-4 board of 1 inch², 2 oz Cu

Unit

TO-220

62.50 °C/W

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