MOCD223V-M Ver la hoja de datos (PDF) - Fairchild Semiconductor
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MOCD223V-M
Fairchild Semiconductor
MOCD223V-M Datasheet PDF : 9 Pages
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Electrical Characteristics (TA = 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
EMITTER
VF Input Forward Voltage
IR
Reverse Leakage Current
CIN Capacitance
DETECTOR
ICEO1
ICEO2
BVCEO
Collector-Emitter Dark Current
Collector-Emitter Breakdown
Voltage
BVECO Emitter-Collector Breakdown
Voltage
CCE Collector-Emitter Capacitance
COUPLED
CTR Collector-Output Current(4)
VCE (sat) Collector-Emitter Saturation
Voltage
ton Turn-On Time
toff
Turn-Off Time
tr
Rise Time
tf
Fall Time
VISO
RISO
CISO
Isolation Surge Voltage(1,2,3)
Isolation Resistance(2)
Isolation Capacitance(2)
*Typical values at TA = 25°C
IF = 1.0mA
VR = 6.0V
VCE = 5.0V, TA = 25°C
VCE = 5.0V, TA = 100°C
IC = 100µA
IE = 100µA
f = 1.0MHz, VCE = 0
IF = 1.0mA, VCE = 5V
IC = 500µA, IF = 1.0mA
IF = 5.0mA, VCC = 10V, RL = 100Ω
(Fig 6.)
IF = 5.0mA, VCC = 10V, RL = 100Ω
(Fig 6.)
IF = 5.0mA, VCC = 10V, RL = 100Ω
(Fig 6.)
IF = 5.0mA, VCC = 10V, RL = 100Ω
(Fig 6.)
f = 60Hz, t = 1 min.
VI-O = 500V
VI-O = 0V, f = 1 MHz
Min. Typ.* Max. Unit
1.25 1.3
V
0.001 100
µA
18
pF
1.0 50
nA
1.0
µA
30 90
V
7.0 10
V
5.5
pF
500 1000
%
1.0
V
8
µs
55
µs
6
µs
45
µs
2500
1011
0.2
Vac(rms)
Ω
pF
Notes:
1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec.
4. Current Transfer Ratio (CTR) = IC / IF x 100%.
3
MOCD223-M Rev. 1.0.0
www.fairchildsemi.com
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