FDPF4N60NZ Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDPF4N60NZ Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
VGS = 10.0V
10
8.0V
7.0V
6.5V
6.0V
5.5V
1
0.1
0.02
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
10
30
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4.5
4.0
3.5
3.0
2.5
2.0
1.5
0.0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
1.5 3.0 4.5 6.0 7.5 9.0
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
700
Ciss
100
Coss
*Note:
10 1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss
Crss = Cgd
1
0.1
1
10
30
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
10
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
150oC
1
25oC
-55oC
0.1
2
4
6
8
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
40
10
150oC
25oC
1
0.1
0.0
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.8
1.2
1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
*Note: ID = 3.8A
0
0.0 1.5 3.0 4.5 6.0 7.5 9.0
Qg, Total Gate Charge [nC]
FDP4N60NZ / FDPF4N60NZ Rev.C0
3
www.fairchildsemi.com
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