4N25-X007 Ver la hoja de datos (PDF) - Vishay Semiconductors
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4N25-X007 Datasheet PDF : 9 Pages
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4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Forward voltage1)
IF = 50 mA
Reverse current1)
VR = 3.0 V
Capacitance
VR = 0 V
1) Indicates JEDEC registered values
Symbol
Min
Typ.
Max
Unit
VF
1.3
1.5
V
IR
0.1
100
µA
CO
25
pF
Output
Parameter
Collector-base breakdown
voltage1)
Collector-emitter breakdown
voltage1)
Emitter-collector breakdown
voltage1)
ICEO(dark)1)
Test condition
IC = 100 µA
IC = 1.0 mA
IE = 100 µA
VCE = 10 V, (base open)
ICBO(dark)1)
VCB = 10 V, (emitter open)
Collector-emitter capacitance VCE = 0
1) Indicates JEDEC registered values
Part
Symbol
Min
Typ.
Max
Unit
BVCBO
70
V
BVCEO
30
V
BVECO
7.0
V
4N25
4N26
4N27
4N28
CCE
5.0
50
nA
5.0
50
nA
5.0
50
nA
10
100
nA
2.0
20
nA
6.0
pF
Coupler
Parameter
Isolation voltage1)
Test condition
Peak, 60 Hz
Saturation voltage, collector-
emitter
Resistance, input output1)
Capacitance (input-output)
ICE = 2.0 mA, IF = 50 mA
VIO = 500 V
f = 1.0 MHz
1) Indicates JEDEC registered values
Part
Symbol
Min
Typ.
Max
Unit
4N25
VIO
2500
V
4N26
VIO
1500
V
4N27
VIO
1500
V
4N28
VIO
500
V
VCE(sat)
0.5
V
RIO
100
GΩ
CIO
0.5
pF
Current Transfer Ratio
Parameter
DC Current Transfer Ratio1)
Test condition
VCE = 10 V, IF = 10 mA
1) Indicates JEDEC registered value
Part
Symbol
Min
Typ.
Max
Unit
4N25 CTRDC
20
50
%
4N26 CTRDC
20
50
%
4N27 CTRDC
10
30
%
4N28 CTRDC
10
30
%
Document Number 83725
Rev. 1.4, 26-Jan-05
www.vishay.com
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