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BGU7042 Datasheet PDF : 11 Pages
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NXP Semiconductors
BGU7042
1 GHz wideband low-noise amplifier with bypass
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCC
Vctrl(Gp)
supply voltage
power gain control
voltage
RF input AC coupled
pin CTRL
ICC(tot)
Ptot
Pi
Tstg
Tj
Tamb
VESD
total supply current
total power dissipation
input power
storage temperature
junction temperature
ambient temperature
electrostatic discharge
voltage
Tsp 100 C
single tone
Human Body Model (HBM);
according to JEDEC standard
22-A114E
Charged Device Model (CDM);
according to JEDEC standard
22-C101B
Min Max
0.6 3.5
[1] 0
VCC
Unit
V
V
- 60 mA
[2] -
250 mW
- 10 dBm
65 +150 C
- 150 C
10 +70 C
2-
kV
1.5 -
kV
[1] Vctrl(Gp) must not exceed VCC; ICTRL must be limited to 5 mA (maximum).
[2] Tsp is the temperature at the solder point of the ground lead.
Remark: Vctrl(Gp) must not exceed VCC; ICTRL must be limited to a maximum of 5 mA.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
7. Characteristics
Conditions
Typ Unit
240 K/W
Table 7. Characteristics
Tamb = 25 C; typical values at VCC = 3.3 V; ZS = ZL = 75 ; Rbias = 7.5 ; 40 MHz f1 1000 MHz.
Symbol Parameter
Conditions
Min Typ Max Unit
VCC
ICC(tot)
supply voltage
total supply current
RF input AC coupled
Gp = 10 dB mode
bypass mode
3.1 3.3 3.5 V
[1] -
38 -
mA
[1] -
3-
mA
s212 insertion power gain
Gp = 10 dB mode
bypass mode
[1] -
10 -
dB
[1] -
2 -
dB
SLsl
slope straight line
Gp = 10 dB mode
- 1 - dB
FL
flatness of frequency response Gp = 10 dB mode
NF
noise figure
Gp = 10 dB mode
bypass mode
- 0.2 - dB
[1] -
3.8 -
dB
[1] -
2.5 -
dB
BGU7042
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
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