STTH3R02S Ver la hoja de datos (PDF) - STMicroelectronics

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STTH3R02S

Ultrafast recovery diode

STMicroelectronics 

A

K

A

A

K DO-201AD K

DO-15

STTH3R02

STTH3R02Q

A

K

SMC

STTH3R02S

Features

• Very low conduction losses

• Negligible switching losses

• Low forward and reverse recovery times

• High junction temperature

Description

The STTH3R02 uses ST's new 200 V planar Pt

doping technology, and it is specially suited for

switching mode base drive and transistor circuits.

Packaged in DO-201AD, DO-15, and SMC, this

device is intended for use in low voltage, high

frequency inverters, free wheeling and polarity

protection.

STTH3R02

Ultrafast recovery diode

Datasheet - production data

Table 1. Device summary

IF(AV)

3A

VRRM

200 V

Tj (max)

175 °C

VF (typ)

0.7 V

trr (typ)

16 ns

April 2014

This is information on a product in full production.

DocID12359 Rev 3

1/9

www.st.com

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