STP6N60M2 Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción

Fabricante

STP6N60M2

N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STF6N60M2, STP6N60M2, STU6N60M2

Electrical characteristics

Symbol

Table 8. Source drain diode

Parameter

Test conditions

Min.

ISD Source-drain current

-

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 4.5 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

ISD = 4.5 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 19)

-

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4.5 A, di/dt = 100 A/µs -

VDD = 60 V, Tj = 150 °C

-

(see Figure 19)

-

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Typ.

274

1.47

10.7

376

1.96

10.5

Max. Unit

4.5 A

18 A

1.6 V

ns

µC

A

ns

µC

A

DocID024771 Rev 2

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