STF6N60M2, STP6N60M2, STU6N60M2
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min.
ISD Source-drain current
-
ISDM (1) Source-drain current (pulsed)
-
VSD (2) Forward on voltage
ISD = 4.5 A, VGS = 0
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
-
ISD = 4.5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 19)
-
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.5 A, di/dt = 100 A/µs -
VDD = 60 V, Tj = 150 °C
-
(see Figure 19)
-
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Typ.
274
1.47
10.7
376
1.96
10.5
Max. Unit
4.5 A
18 A
1.6 V
ns
µC
A
ns
µC
A
DocID024771 Rev 2
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