STF6N60M2 Ver la hoja de datos (PDF) - STMicroelectronics

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STF6N60M2

N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STF6N60M2, STP6N60M2, STU6N60M2

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

TO-220FP

TO-220, IPAK

VGS

ID

ID

IDM(2)

PTOT

VISO

dv/dt(3)

dv/dt(4)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s; TC=25 °C)

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

Tstg

Storage temperature

Tj

Operating junction temperature

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 4.5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V

4. VDS ≤ 480 V

± 25

4.5 (1)

4.5

2.9(1)

2.9

18(1)

18

20

60

2500

15

50

- 55 to 150

Unit

V

A

A

A

W

V

V/ns

°C

Table 3. Thermal data

Symbol

Parameter

Value

TO-220FP TO-220

IPAK

Rthj-case

Rthj-amb

Thermal resistance junction-case max

Thermal resistance junction-ambient max

6.25

62.5

2.08

100

Unit

°C/W

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID= IAR; VDD=50)

1

A

86

mJ

DocID024771 Rev 2

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