STF6N60M2 Ver la hoja de datos (PDF) - STMicroelectronics

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STF6N60M2

N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STF6N60M2, STP6N60M2,

STU6N60M2

N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2

Power MOSFETs in TO-220FP, TO-220 and IPAK packages

Datasheet - production data

TAB

3

2

1

TO-220FP

TAB

3

2

1

IPAK

3

2

1

TO-220

Figure 1. Internal schematic diagram

, TAB

Features

Order code

STF6N60M2

STP6N60M2

STU6N60M2

VDS @

TJmax

RDS(on)

max

ID

650 V 1.2 Ω 4.5 A

• Extremely low gate charge

• Excellent output capacitance (Coss) profile

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, the devices exhibit low on-resistance

and optimized switching characteristics, rendering

them suitable for the most demanding high

efficiency converters.

AM15572v1

Order code

STF6N60M2

STP6N60M2

STU6N60M2

Table 1. Device summary

Marking

Package

TO-220FP

6N60M2

TO-220

IPAK

Packing

Tube

October 2015

This is information on a product in full production.

DocID024771 Rev 2

1/18

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