2SD2674(RevB) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SD2674 Datasheet PDF : 3 Pages
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Transistors
2SD2674
General purpose amplification (12V, 1.5A)
2SD2674
zApplication
Low frequency amplifier
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) =< 200mV
at IC = 500mA / IB = 25mA
zExternal dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
2.9
0.4
(3)
(1) (2)
0.95 0.95
1.9
1.0MAX
0.85
0.7
0~0.1
0.16
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
∗1 Single pulse, PW=1ms
∗2 Mounted on a 25×25× t 0.8mm Ceramic substrate
Limits
15
12
6
1.5
3
500
1∗2
150
−55 to +150
Unit
V
V
V
A
A ∗1
mW
W
°C
°C
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SD2674
Taping
TL
3000
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 15 − −
V IC=10µA
Collector-emitter breakdown voltage BVCEO 12 − −
V IC=1mA
Emitter-base breakdown voltage
BVEBO 6
−−
V IE=10µA
Collector cutoff current
ICBO
−
− 100 nA VCB=15V
Emitter cutoff current
IEBO
−
− 100 nA VEB=6V
Collector-emitter saturation voltage
DC current gain
Transition frequency
VCE(sat)
−
85 200 mV IC/IB=500mA/25mA
hFE 270 − 680 − VCE/IC=2V/200mA
∗
fT
− 400 − MHz VCE=2V, IE=−200mA, f=100MHz ∗
Collector output capacitance
Cob − 12 − pF VCB=10V, IE=0A, f=1MHz
∗ Pulsed
Rev.B
1/2
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