2SA1941(2006) Ver la hoja de datos (PDF) - Toshiba

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componentes Descripción

Fabricante

2SA1941
(Rev.:2006)

TOSHIBA Transistor Silicon PNP Triple Diffused Type

Toshiba 

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

ICBO

VCB = −140 V, IE = 0

IEBO

VEB = −5 V, IC = 0

V (BR) CEO IC = −50 mA, IB = 0

hFE (1)

VCE = −5 V, IC = −1 A

(Note)

hFE (2)

VCE (sat)

VBE

fT

Cob

VCE = −5 V, IC = −5 A

IC = −7 A, IB = −0.7 A

VCE = −5 V, IC = −5 A

VCE = −5 V, IC = −1 A

VCB = −10 V, IE = 0, f = 1 MHz

Note: hFE (1) classification R: 55 to 110, O: 80 to 160

Marking

2SA1941

Min Typ. Max Unit

―

― −5.0 μA

―

― −5.0 μA

−140 ―

―

V

55

―

160

35

83

―

― −0.8 −2.0

V

― −1.0 −1.5

V

―

30

― MHz

― 320 ―

pF

TOSHIBA

A1941

Characteristics

indicator

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-09

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