072N10N Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
072N10N Datasheet PDF : 10 Pages
| |||
IPP072N10N3 G IPI072N10N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=50 V,
f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=50 V, V GS=10 V,
-
t d(off)
I D=80 A, R G=3.6 Ω
-
tf
-
3690
646
25
19
37
37
9
4910 pF
-
-
- ns
-
-
-
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
18
- nC
Q gd
-
10
-
Q sw
V DD=50 V, I D=80 A,
V GS=0 to 10 V
-
16
-
Qg
-
51
68
V plateau
-
4.9
-V
Q oss
V DD=50 V, V GS=0 V
-
68
91 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=80 A,
T j=25 °C
t rr
V R=50 V, I F=I S,
Q rr
di F/dt =100 A/µs
-
-
80 A
-
-
320
-
1
1.2 V
-
73
- ns
-
139
- nC
6) See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2008-10-21
Share Link: 