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NCV887720BSTGEVB Ver la hoja de datos (PDF) - ON Semiconductor

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NCV887720BSTGEVB Datasheet PDF : 8 Pages
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NCV887720BSTGEVB
Table 1. EVALUATION BOARD TERMINALS
Terminal
Function
VIN (large post)
Positive DC input voltage (power)
GND (large post)
Common DC return (power)
VOUT (large post)
Regulated DC output voltage (power)
GND (small post)
Common DC return, monitoring point
VC (small post)
Voltage compensation, monitoring point
VOUT (small post)
Regulated DC output voltage, monitoring point
VDRV (small post)
Driving voltage, monitoring point
DISB (small post)
Disable override input, monitoring point
ISNS (small post)
Current sense resistor voltage, monitoring point
VG (small post)
MOSFET gate voltage, monitoring point
SW (small post)
MOSFET drain voltage, monitoring point
Table 2. ABSOLUTE MAXIMUM RATINGS (Voltages are with respect to GND)
Rating
Value
Unit
DC supply voltage (VIN)
-0.3 to 45
V
DC supply voltage (EN, SYNC)
-0.3 to 6
V
DC Voltage (DISB)
-0.3 to 6
V
Junction Temperature
-40 to 150
°C
Ambient temperature (Evaluation Board)
-40 to 105
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 3. ELECTRICAL CHARACTERISTICS
(TA = 25°C, 3.75 V VIN Vout_LED, VDISB = 5 V, unless otherwise specified)
Characteristics
Conditions
Typical Value
Unit
Switching
Switching Frequency
ROSC = 10.7 kW
440
kHz
User Selectable Frequency Range
ROSC (refer to datasheet)
170-500
kHz
Current Limit
Cycle-by-cycle Current Limit (FET)
-
11
A
Protections
Maximum Duty Cycle
-
0.83
-
VOUT Undervoltage Lockout (UVLO)
VOUT falling
3.8
V
Thermal Shutdown
TA increasing
170
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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