NXP Semiconductors
Voltage regulator diodes
Product data sheet
PDZ-B series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
IF
IZSM
PARAMETER
continuous forward current
non-repetitive peak reverse current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
MIN. MAX. UNIT
−
200
mA
tp = 100 μs; square wave;
Tamb = 25 °C prior to surge
Tamb = 25 °C; note 1;
−
see Fig.2
see Table 2
400
mW
−65
+150 °C
−
150
°C
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-s)
Rth(j-a)
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
note 1
Note
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.
VALUE
130
340
UNIT
K/W
K/W
2004 Mar 22
3