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1PS59SB14,115 Datasheet PDF : 6 Pages
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Philips Semiconductors
Schottky barrier (double) diodes
Product specification
1PS59SB10 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
Ptot
total power dissipation (per package)
Tstg
storage temperature
Tj
junction temperature
tp ≤ 1 s; δ ≤ 0.5
tp < 10 ms
Tamb ≤ 25 °C
MIN. MAX. UNIT
−
30
V
−
200 mA
−
300 mA
−
600 mA
−
250 mW
−65 +150 °C
−
125 °C
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
trr
reverse recovery time
Cd
diode capacitance
CONDITIONS
MAX.
UNIT
see Fig.6
IF = 0.1 mA
240
mV
IF = 1 mA
320
mV
IF = 10 mA
400
mV
IF = 30 mA
500
mV
IF = 100 mA
800
mV
VR = 25 V; see Fig.7
2
µA
when switched from IF = 10 mA 5
ns
to IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA;
see Fig.9
f = 1 MHz; VR = 1 V; see Fig.8 10
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SC59 standard mounting conditions.
VALUE
500
UNIT
K/W
1996 Sep 20
3
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