SI6953DQ Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
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Fabricante
SI6953DQ Datasheet PDF : 5 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –20 V,
VGS = –20 V,
VGS = 20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
–20
–22
V
mV/°C
–1
µA
–100 nA
100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
–1 –1.8 –3
V
4
mV/°C
VGS = –10 V, ID = –1.9 A
96 170 mΩ
VGS = –4.5 V, ID = –1.3 A
151 320
VGS = –10 V, ID = –1.9 A, TJ=125°C
134 254
VGS = –10 V, VDS = –5 V
–10
A
VDS = –15 V, ID = –1.9 A
4
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
218
pF
65
pF
31
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
trr
Reverse Recovery Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = –10V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
VGS = 0 V, IF = 1.5 A,
dIF/dt = 100A/µs
VDS = –10V,
VGS = –10 V
ID = –1.9 A,
6
20
ns
15 25
ns
12 30
ns
1.5 15
ns
11 70
ns
4
10
nC
0.9
nC
0.7
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –1.25 A (Note 2)
Voltage
–1.25 A
–0.8 –1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 100°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 125°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si6953DQ Rev. B (W)
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