SEMICONDUCTOR
TECHNICAL DATA
2 INPUT AND GATE
FEATURES
ᴌHigh output drive : ᴦ24mA(min.) @VCC=3V.
ᴌSuper high speed operation : tpd 2.4ns(typ.) @VCC=5V, 50pF.
ᴌOperation voltage range : VCC(opr)=1.65~5.5V.
ᴌLatch-up performance : ᴦ500mA or more
ᴌESD performance : ᴦ200V or more (EIAJ)
ᴦ2000V or more (MIL)
ᴌPower down protection is provided on all inputs and outputs.
MARKING
Type Name
Z08
Lot No.
KIC7WZ08FK
SILICON MONOLITHIC CMOS
DIGITAL INTEGRATED CIRCUIT
B
C
DIM MILLIMETERS
1
8
A
2.0 +_ 0.1
B
3.1+_ 0.1
C
2.3+_ 0.1
D
0.5
4
5
E 0.2+0.05/-0.04
F
0.7+_ 0.1
G
0.12+_ 0.04
H
0 ~ 0.1
H
G
US8
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Power Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current
DC VCC/ground Current
Power Dissipation
Storage Temperature Range
Lead Temperature (10s)
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
TL
RATING
-0.5~6
-0.5~6
-0.5~6
-20
-20
Ź50
Ź50
200
-65ᴕ150
260
UNIT
V
V
V
mA
mA
mA
mA
mW
ᴱ
ᴱ
PIN CONNECTION(TOP VIEW)
1A 1
1B 2
2Y 3
GND 4
8 VCC
7 1Y
6 2B
5 2A
2002. 3. 7
Revision No : 1
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