FDMA1032CZ(2006) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDMA1032CZ Datasheet PDF : 9 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSS
Gate-Body Leakage
VGS = 0 V,
ID = 250 µA
VGS = 0 V,
ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 16 V,
VGS = 0 V
VDS = –16 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
Q1 20
V
Q2 –20
Q1
15
mV/°C
Q2
–12
Q1
1
µA
Q2
–1
All
±10 µA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
VDS = VGS,
ID = 250 µA
Q1
VDS = VGS,
ID = –250 µA
Q2
ID = 250 µA, Referenced to 25°C
Q1
ID = –250 µA, Referenced to 25°C
Q2
VGS = 4.5 V, ID = 3.7 A
Q1
VGS = 2.5 V, ID = 3.3 A
VGS = 4.5 V, ID = 3.7 A, TJ = 125°C
VGS = –4.5V, ID = –3.1 A
Q2
VGS = –2.5 V, ID = –2.5 A
VGS = –4.5 V, ID = –3.1 A,TJ = 125°C
VDS = 10 V,
ID = 3.7 A
Q1
VDS = –10 V,
ID = –3.1 A
Q2
Q1
Q1
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
Q2
Q1
Q2
Q2
VDS = –10 V, VGS = 0 V, f = 1.0 MHz Q1
Q2
0.6 1.0 1.5
V
–0.6 –1.0 –1.5
–4
mV/°C
4
37 68 mΩ
50 86
53 90
60 95 mΩ
88 141
87 140
16
S
–11
340
pF
540
80
pF
120
60
pF
100
FDMA1032CZ Rev B (W)
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