BB639E7904XT Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BB639E7904XT

Silicon Variable Capacitance Diodes

Infineon Technologies 

BB639/BB659...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Reverse current

VR = 30 V

VR = 30 V, TA = 85 °C

IR

nA

-

-

10

-

- 200

AC Characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 2 V, f = 1 MHz

VR = 25 V, f = 1 MHz

VR = 28 V, f = 1 MHz

CT

pF

36 38.3 40

27.7 29.75 31.8

2.5 2.85 3.2

2.4 2.6 2.9

Capacitance ratio

VR = 1 V, VR = 28 V, f = 1 MHz

CT1/CT28

Capacitance ratio

CT2/CT25

VR = 2 V, VR = 25 V, f = 1 MHz

Capacitance matching1)

∆CT/CT

VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequenc

BB639

13.5 14.7 -

9.8 10.4 -

%

-

-

2.5

VR = 1 V, VR = 28 V, f = 1 MHz, 4 diode sequenc

BB659

-

0.3

1

VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequenc

BB659

-

0.4

2

Series resistance

rS

VR = 5 V, f = 470 MHz

1For details please refer to Application Note 047.

- 0.65 0.7 Ω

2

2011-06-15

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