SPA15N60C3 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
SPA15N60C3 Datasheet PDF : 2 Pages
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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
SPA15N60C3
·FEATURES
· Drain-source on-resistance:
RDS(on) ≤ 0.28Ω@10V
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High fast switching Power Supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
15
IDM
Drain Current-Single Pulsed
45
PD
Total Dissipation @TC=25℃
34
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
℃
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
3.7
UNIT
℃/W
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