NGTB15N60EG
TYPICAL CHARACTERISTICS
60
TJ = 25°C
50
VGE = 17 V to 13 V
40
30
11 V
20
10
9V
0
7V
01
2
3
4
5
6
78
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. IGBT Output Characteristics
60
TJ = 150°C
50
VGE = 17 V to 15 V
40
13 V
30
11 V
20
10
9V
7V
0
01 2 3 4 5 6 7 8 9
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. IGBT Output Characteristics
60
TJ = −40°C
50
VGE = 17 V to 13 V
40
30
20
11 V
60
VCE = 20 V
50
40
30
20
TJ = −40°C
25°C
150°C
10
9V
0
7V
01
2
3
4
5
6
7
8
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. IGBT Output Characteristics
10
0
0
4
8
12
16
VGE, GATE−EMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
3.5
10000
VGE = 0 V,
3
IC = 30 A
f = 1 MHz
Cies
2.5
1000
IC = 15 A
2
1.5
1
IC = 10 A
0.5
IC = 5 A
0
−60 −40 −20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. VCE(sat) vs. TJ
100
10
0
Cres
Coes
10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
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