DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SMBG10 Ver la hoja de datos (PDF) - Unspecified

Número de pieza
componentes Descripción
Fabricante
SMBG10
ETC
Unspecified ETC
SMBG10 Datasheet PDF : 4 Pages
1 2 3 4
SMBJ5.0 thru SMBJ170CA
Transient Voltage Suppressor
Breakdown Voltage 5.0 to 170 Volts
Peak Pulse Power 600 Watts
Features
CASE: SMB (DO214AA)
Breakdown Voltages (VBR) from 5.0 to 170V
600W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.01%
Fast Response Time
Low incremental surge resistance
Excellent clamping capability
Available in uni-directional and bi-directional
High temperature soldering guaranteed: 265/10
印无效 Dimensions in inches and (millimeters)
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
Application
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICS, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
Mechanical Data
Case: Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals: Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking: Body marked with part number
Polarity: Cathode indicated by band. No marking on bi-
directional devices
Weight: 0.093gApproximately
Maximum Ratings and Electrical Characteristics @ 25OC unless otherwise specified
Symbol
Conditions
Value
Unit
PPPM Peak pulse power capability with a 10/1000μs
600
W
IPPM
PM(AV)
Peak pulse current with a 10/1000μs
Steady state power dissipation at TL=25,Lead lengths 0.375”(10mm)
Steady state power dissipation at TA=25when mounted on FR4 PC
described for thermal resistance
SEE TABLE1
A
5.0
W
1.38
W
IFSM
Peak forward surge current,8.3ms single half sine-wave unidirectional only
100
A
VF
Maximum instantaneous forward voltage at 30A for unidirectional only
3.5
V
RθJL Thermal resistance junction to lead
25
/W
RθJA Thermal resistance junction to ambient
90
/W
TJ, TSTG Operating and Storage Temperature
-65 to +150
Notes:
Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
Document Number: SMBJ5.0 thru SMBJ170CA
Feb.29, 2012
1
www.smsemi.com

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]