Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
K3157 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
K3157
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
K3157 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
2SK3157
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
I
D
= 20 A
0.8
10 A
0.4
5A
0
4
8
12 16 20
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
500
200
100
V
GS
= 4 V
50
10 V
20
10
12
5 10 20 50
100
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
150
5, 10 A
I
D
= 20 A
100
V
GS
= 4 V
50
5, 10 A
20 A
10 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25 °C
10
75 °C
3
25 °C
1
0.3
0.1
0.1 0.2
V
DS
= 10 V
Pulse Test
0.5 1 2 5
10
20
50 100
Drain Current I
D
(A)
4
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]