K3157 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

K3157

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK3157

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS = 50 mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

TO–220FM

ADE-208-769A (Z)

2nd. Edition

Februaty 1999

D

G

S

123

1. Gate

2. Drain

3. Source

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