ZXMN6A08GTC Ver la hoja de datos (PDF) - Diodes Incorporated.
Número de pieza
componentes Descripción
Fabricante
ZXMN6A08GTC Datasheet PDF : 8 Pages
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ZXMN6A08G
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
@ VGS = 10V; Tamb = 25°C(b)
@ VGS = 10V; Tamb = 70°C(b)
@ VGS = 10V; Tamb = 25°C(a)
Pulsed drain current(c)
Continuous source current (body diode)(b)
Pulsed source current (body diode)(c)
Power dissipation at Tamb = 25°C(a)
Linear derating factor
Power dissipation at Tamb = 25°C(b)
Linear derating factor
Operating and storage temperature range
Symbol
VDSS
VGS
ID
IDM
IS
ISM
PD
PD
Tj, Tstg
Limit
60
± 20
5.3
4.2
3.8
20
2.1
20
2
16
3.9
31
-55 to +150
Unit
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient(a)
Junction to ambient(b)
Symbol
R⍜JA
R⍜JA
Limit
62.5
32
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
Issue 1 - May 2006
2
© Zetex Semiconductors plc 2006
www.zetex.com
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