ZXMN10A11GFTA Ver la hoja de datos (PDF) - Zetex => Diodes

Número de pieza

componentes Descripción

Fabricante

ZXMN10A11GFTA

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN10A11G

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current VGS=10V; TA=25°C(b)

VGS=10V; TA=70°C(b)

VGS=10V; TA=25°C(a)

Pulsed Drain Current (c)

Continuous Source Current (Body Diode) (b)

Pulsed Source Current (Body Diode)(c)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Power Dissipation at TA=25°C (b)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj:Tstg

LIMIT

100

20

1.8

1.4

1.3

5.8

4.6

5.8

2

16

3.9

31

-55 to +150

UNIT

V

V

A

A

A

A

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

Junction to Ambient (a)

Junction to Ambient (b)

SYMBOL

RθJA

RθJA

VALUE

62.5

32

UNIT

°C/W

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр10 secs.

(c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10␮s - pulse width limited by maximum junction temperature. Refer to

Transient Thermal Impedance graph.

ISSUE 1 - MARCH 2002

2

Share Link: