ZXLD1322DCCTC Ver la hoja de datos (PDF) - Diodes Incorporated.
Número de pieza
componentes Descripción
Fabricante
ZXLD1322DCCTC
Diodes Incorporated.
ZXLD1322DCCTC Datasheet PDF : 17 Pages
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A Product Line of
Diodes Incorporated
ZXLD1322
Switching NPN Transistor
Symbol
ISW
IBON(max)
Parameter
Average continuous switch current(c)
Maximum base current into switch
transistor from internal drive circuit(d)
Base current into switch transistor
IBON
using external resistor (RBASE) from
BIAS pin to ground
V(BR)CE Collector-Emitter breakdown voltage
VCE(sat) Collector-Emitter saturation voltage
hFE
COBO
t(on)
t(off)
Static forward current transfer ratio
Output capacitance
Turn-on time
Turn-off time
Condition
2V<VIN<18V BIAS pin at 0V
RBIAS = 1680Ω
IC = 10mA
IC = 0.1A, IB = 10mA
IC = 2A, IB = 50mA(e)
IC = 200mA, VCE = 2V
IC = 2A, VCE = 2V
VCB = 10V,f = 1MHz
Ic = 0 to IC = 2A VIN = 10V
IC = 2A to Ic < 100μA
Min. Typ. Max. Unit
2
A
30
50
70
mA
10
mA
15
V
50
120
mV
209
116
64
pF
30
ns
28
ns
High-Side Current Monitor
Symbol
VM_VIN
VMON
I_M_VIN
Parameter
Supply voltage
Sense voltage
Input current
TCO(MON) Temperature coefficient
BW
Bandwidth
Tran conductance
Gm
ΔIOUT/ΔVMON
ACC
Accuracy
Condition
=V(VIN) – VM_VIN
Measured into M_VIN pin
VMON=10mV
VMON=100mV
VMON=10mV
VMON=100mV
RM = 0.1Ω
VMON = 100mV
Min.
2.5
0
Typ.
100
0.08
370
150
350
2.5
1
-3
Reference Current Monitor
Symbol
VADJ
TCO
(MON)
BW
Gm
ACC
Parameter
Adjust Voltage
Temperature coefficient
Bandwidth
Tran conductance
ΔIOUT/ΔVADJ
Accuracy
Condition
VADJ = 50mV
VADJ = 500mV
VADJ = 50mV
VADJ = 500mV
VADJ = 500mV
Min.
0
-3
Notes:
(c) Measured under pulse conditions.
(d) This current is measured via the collectors and emitters of the switch with these connected to ground (0V)
(e) Measured under pulse conditions. Peak Current = IC
Typ.
160
200
275
3
200
Max.
18
200
1
3
Max.
500
3
Unit
V
mV
µA
ppm/K
KHz
Mhz
mA/V
%
Unit
mV
ppm/K
KHz
Mhz
µA/V
%
ZXLD1322
Document number: DS32166 Rev. 3 - 2
6 of 17
www.diodes.com
April 2010
© Diodes Incorporated
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