ZVP4525Z Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza

componentes Descripción

Fabricante

ZVP4525Z

250V P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZVP4525Z

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Drain-Source Voltage

SYMBOL

VDSS

Gate Source Voltage

Continuous Drain Current (VGS=10V; TA=25°C)(a)

(VGS=10V; TA=70°C)(a)

Pulsed Drain Current (c)

VGS

ID

ID

IDM

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

Power Dissipation at TA=25°C (a)

Linear Derating Factor

Operating and Storage Temperature Range

IS

ISM

PD

Tj:Tstg

LIMIT

250

±40

-205

-164

-1

-0.75

-1

1.2

9.6

-55 to +150

UNIT

V

V

mA

mA

A

A

A

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

RθJA

103

°C/W

Junction to Ambient (b)

RθJA

50

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр5 secs.

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

NB High Voltage Applications

For high voltage applications, the appropriate industry sector guidelines should be considered with regard to

voltage spacing between conductors.

SEMICONDUCTORS

2

ISSUE 2 - JUNE 2007

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