ZVN4206G(1996) Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza

componentes Descripción

Fabricante

ZVN4206G
(Rev.:1996)

SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Diodes Incorporated. 

ZVN4206G

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown Voltage BVDSS 60

V

ID=1mA, VGS=0V

Gate-Source Threshold Voltage VGS(th) 1.3 3

V

ID=1mA, VDS= VGS

Gate-Body Leakage

IGSS

100 nA VGS=± 20V, VDS=0V

Zero Gate Voltage Drain Current IDSS

10

µA VDS=60V, VGS=0V

100 µA VDS=48V, VGS=0V, T=125°C(2)

On-State Drain Current (1)

ID(on)

3

A

VDS=25V, VGS=10V

Static Drain-Source On-State

Resistance (1)

RDS(on)

1

Ω

1.5 Ω

VGS=10V, ID=1.5A

VGS=5V, ID=0.5A

Forward Transconductance (1)(2) gfs

300

mS VDS=25V,ID=1.5A

Input Capacitance (2)

Ciss

100 pF

Common Source Output

Coss

Capacitance (2)

60

pF VDS=25V, VGS=0V, f=1MHz

Reverse Transfer Capacitance (2) Crss

20

pF

Turn-On Delay Time (2)(3)

td(on)

8

ns

Rise Time (2)(3)

tr

12

ns VDD ≈25V, ID=1.5A, VGEN =10V

Turn-Off Delay Time (2)(3)

td(off)

12

ns

Fall Time (2)(3)

tf

15

ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%

(2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

3 - 402

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