ZMT31
PARAMETER
Supply voltage
Total power dissipation
Operating temperature range
Storage temperature range
Sensor chip alignment error
SYMBOL
VB
Ptot
Tamb
Tstg
␣e
LIMIT
5
120
-25 to +130
-40 to +130
Յ2
UNIT
V
mW
ЊC
ЊC
Њ
PARAMETER
Bridge resistance
Offset voltage
SYMBOL
Rbr
VOff / VB
Sensitivity
S␣
Half bridge symmetry
(VS/2-VO)/VB
Output voltage range
(|Vmax|+|Vmin|) /VB
Zero offset angle hysteresis ⌬␣
Temperature coefficient of TCBR
the bridge resistance -25ЊC
<Tamb <100ЊC
Temperature coefficient of TCSV
the open circuit sensitivity
-25ЊC <Tamb <100ЊC
TCSI
Temperature coefficient of TCOFF
the offset voltage -25ЊC
<Tamb <100ЊC
MIN. TYP. MAX. UNIT
2.0
3.0
4.0 k⍀
-2.0
+2.0 mV/V
0.2
(mV/V)/Њ
-2.0
+2.0 mV/V
16
mV/V
2Њ
0.25 0.30 0.35 %/K
TEST
CONDITIONS
bridge 1: ␣=45Њ;
bridge 2: ␣=0Њ
bridge 1: ␣=0Њ;
bridge 2: ␣=45Њ
bridge 1: ␣=0Њ;
bridge 2: ␣=45Њ
-0.35
-0.05
-3
-0.30
0
-0.25 %/K
0.05 %/K
+3 (V/V)/K
VB = const.
IB = const
SEMICONDUCTORS
2
ISSUE 4 - JUNE 2004