XC9106 Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR
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XC9106 Datasheet PDF : 8 Pages
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XC9106 / 07 Series
Preliminary
PWM Control, PWM/PFM Switching Control,
Step-up DC/DC Converters
Externally Applied Reference Voltage (Vref)
" ELECTRICAL CHARACTERISTICS
XC9106D003MR, XC9107D003MR
(FOSC=300 (kHz)
Ta=25OC
PARAMETER
Output Voltage
Reference Voltage Range
SYMBOL
VOUT Vref = 0.9V
Vref
CONDITIONS
MIN.
8.820
0.8
TYP.
9.000
MAX.
9.180
2.5
UNITS CIRCUIT
V
1
V
-
FB Control Voltage
Vref = 0.8V
VFB Vref = 0.9V
0.784 0.800 0.816
0.882 0.900 0.918 V
4
Vref = 2.5V
2.450 2.500 2.500
*1 Power Supply Voltage Range VDD VDD as shown right or (Vref applied voltage + 0.7V)
1.8
10.0
V
-
Operation Start Voltage
VST1 Recommended Circuit using 2SD1628, IOUT=1.0mA
0.9
V
3
*1
Oscillation Start Voltage
VST2
No external connections
CE/Vref=0.9V, Voltage applied, FB=0V
Operation Holding Voltage
VHLD Recommended Circuit using 2SD1628, IOUT=1.0mA
Supply Current 1
IDD1 Same as VST2, VDD=3.300V
Supply Current 2
IDD2 Same as IDD1, FB=1.2V
Stand-by Current
ISTB Same as IDD1, CE/Vref=0V
Oscillation Frequency
FOSC Same as IDD1
Maximum Duty Ratio
MAXDTY Same as IDD1
PFM Duty Ratio
PFMDTY No Load
(XC9106 series)
Efficiency
EFFI Recommended Circuit using XP161A1355
Soft-start Time
TSS Vref=0.9V
CE "High" Voltage
VCEH Same as IDD1
CE "Low" Voltage
VCEL Same as IDD1
EXT "High" ON Resistance REXTH Same as IDD1, VEXT=VOUT-0.4V
EXT "Low" ON Resistance REXTL Same as IDD1, VEXT=0.4V
0.8
V
4
0.7
V
3
62
88
µA
4
16
22
µA
4
1.0
µA
5
255 300 345 KHz
4
75
81
87
%
4
24
32
40
%
1
85
%
1
5.0 10.0 20.0 mS
1
0.65
V
5
0.20
V
5
24
36
Ω
4
16
24
Ω
4
CE "High" Current
CE "Low" Current
FB "High" Current
FB "Low" Current
ICEH
ICEL
IFBH
IFBL
Same as IDD2, CE=0.8V
Same as IDD2, CE=2.5V
Same as IDD2, CE=0V
Same as IDD2, FB=VDD
Same as IDD2, FB=1.0V
-1.0
0.0
µA
5
0.0
2.5
-0.1 µA
5
0.1
µA
5
-0.1 µA
5
Test Conditions: Unless otherwise stated, CL: ceramic, recommended MOS FET should be connected.
VDD = 3.30 (V) ! Vref = 0.09 (V) , RFB1, 2 x 10
VIN = 3.30 (V) ! IOUT = 50 (mA)
Notes 1* :
Although the IC starts step-up operations from a VDD of 0.8V, the output voltage and oscillation frequency are stabilized at
VDD ≥ 1.8V or (Vref applied voltage + 0.7V). Therefore, a VDD of more than 1.8V or (Vref applied voltage + 0.7V) is recommended when VDD is
supplied from VIN or other power sources.
" TYPICAL APPLICATION CIRCUIT
RSENSE
SD
CFB
VOUT RFB1 RFB2
1
5
CL
2
3
4
CE/Vref
L
VIN
Nch Power
MOS FET
Rb
Cb
When obtaining VDD from a source other than VOUT, please insert a
capacitor CDD between the VDD pin and the GND pin in order to
provide stabler operations.
Please wire CL & CIN between the VOUT/VDD pin and the GND pin.
Strengthen the wiring sufficiently. When using a capacitor other than
ceramic or low ESR at CL, please take away RSENSE and short.
5
Insert Rb and CB when using a
bipolar NPN Transistor.
Semiconductor Ltd.
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