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Número de pieza

componentes Descripción

Fabricante

FP201L100

Differential Magnetoresistive Sensor

Infineon Technologies 

FP 212 L 100-22

Maximum ratings

Parameter

Operating temperature

Storage temperature

Power dissipation1)

Supply voltage2)

Insulation voltage between

terminals and magnet

Thermal conductivity

(when soldered)

Symbol

TA

Tstg

Ptot

VIN

VI

GthA

Value

Unit

– 40 / + 140 °C

– 40 / + 150 °C

450

mW

10

V

> 60

V

≥5

mW/K

Characteristics (TA = 25 °C)

Nominal supply voltage

Total resistance, (δ = ∞, I ≤ 1 mA)

Center symmetry3) (δ = ∞)

Offset voltage4)

(at VIN N and δ = ∞)

Open circuit output voltage5)

(VIN N and δ = 0.2 mm)

Cut-off frequency

VIN N

R1-3

M

V0

Vout pp

fc

5

V

220…400

Ω

≤ 10

%

≤ 130

mV

> 1000

mV

> 20

kHz

Measuring arrangements

By approaching a soft iron part close to the sensor a change in its resistance is obtained.

The potential divider circuit of the magneto resistor causes a reduction in the

temperature dependence of the output voltage VOUT.

1) Corresponding to diagram Ptot = f(TA)

2) Corresponding to diagram VIN = f(TA)

3)

M = -R---1---–R---21---–-–---2-R---2---–----3 × 100% for R1-2 > R2-3

4) Corresponding to measuring circuit in Fig. 2

5) Corresponding to measuring circuit in Fig. 2 and arrangement as shown in Fig. 1

Semiconductor Group

2

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