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EL5283C Ver la hoja de datos (PDF) - Elantec -> Intersil

Número de pieza
componentes Descripción
Fabricante
EL5283C
Elantec
Elantec -> Intersil Elantec
EL5283C Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
EL5283C - Preliminary
Dual and Window 8ns High-Speed Comparators
be tied to ground and the other input can be connected to
some voltage reference (like ±100mV) to avoid oscilla-
tion in the output due to unwanted output to input
feedback.
Input Slew Rate
Most high speed comparators oscillate when the voltage
of one of the inputs is close to or equal to the voltage on
the other input due to noise or undesirable feedback. For
clean output waveform, the input must meet certain min-
imum slew rate requirements. In some applications, it
may be helpful to apply some positive feedback (hyster-
esis) between the output and the positive input. The
hysteresis effectively causes one comparator's input
voltage to move quickly past the other, thus taking the
input out of the region where oscillation occurs. For the
EL5283C, the propagation delay increases when the
input slew rate increases for low overdrive voltages.
With high overdrive voltages, the propagation delay
does not change much with the input slew rate.
Latch Pin Dynamics
The EL5283C contains a “transparent” latch for each
channel. The latch pin is designed to be driven with
either a TTL or CMOS output. When the latch is con-
nected to a logic high level or left floating, the
comparator is transparent and immediately responds to
the changes at the input terminals. When the latch is
switched to a logic low level, the comparator output
latches remains latched to its value just before the latch
high-to-low transition. To guarantee data retention, the
input signal must remain the same state at least 1ns (hold
time) after the latch goes low and at least 2ns (setup
time) before the latch goes low. When the latch goes
high, the new data will appear at the output in approxi-
mately 8ns (latch propagation delay).
Power Dissipation
When switching at high speeds, the comparator's drive
capability is limited by the rise in junction temperature
caused by the internal power dissipation. For reliable
operation, the junction temperature must be kept below
TJMAX (125°C).
An approximate equation for the device power dissipa-
tion is as follows. Assume the power dissipation in the
load is very small:
PDISS = (VS × IS + VSD × ISD ) × N
where:
VS is the analog supply voltage from VS+ to VS-
IS is the analog quiescent supply current per comparator
VSD is the digital supply voltage from VSD to ground
ISD is the digital supply current per comparator
N is the number of comparators in the package
ISD strongly depends on the input switching frequency.
Please refer to the performance curve to choose the input
driving frequency. Having obtained the power dissipa-
tion, the maximum junction temperature can be
determined as follows:
TJMAX = TMAX + ΘJA × PDISS
where:
TMAX is the maximum ambient temperature
θJA is the thermal resistance of the package
Window Detector
If VIN is in the range of VREFL < VIN < VREFH, both out-
puts go high and the input in range is high. If VIN is out
of the range set by VREFH and VREFL, the input in range
is low.
VREFH
+
-
VIN
+
VREFL
-
OUTH
Input In
Range
OUTL
8

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