Features
� 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 9nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
WFF2N60B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged avalanche
characteristics. This devices is specially well suited for high efficiency
switch mode power supply .
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL
Channel Temperature
*Drain current limited by maximum junction temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
600
2.0*
1.5*
9.5*
±30
140
2.8
4.5
20
0.15
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
-
-
6.25
℃/W
-
-
62.5
℃/W
Rev.A Nov.2010
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