WFF840B Ver la hoja de datos (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
Número de pieza
componentes Descripción
Fabricante
WFF840B Datasheet PDF : 7 Pages
| |||
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol Test Condition
Gate leakage current
IGSS
VGS=±30V,VDS=0V
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
Drain cut -off current
VDS=500V,VGS=0V
IDSS
VDS=400V,TC=125℃
Drain -source breakdown voltage
Breakdown voltage Temperature
Coefficient
V(BR)DSS
△BVDSS/
△TJ
ID=250 µA,VGS=0V
ID=250µA,Referenced
to 25℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=4.5A
Forward Transconductance
gfs
VDS=40V,ID=4.5A
Input capacitance
Ciss
VDS=25V,
Reverse transfer capacitance
Output capacitance
Crss
VGS=0V,
Coss
f=1MHz
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
tr
VDD=250V,
ton
ID=9A
tf
RG=25Ω
toff
(Note4,5)
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qg
Qgs
Qgd
VDD=400V,
VGS=10V,
ID=9A
(Note4,5)
Min
-
±30
-
500
-
3
-
-
-
-
-
-
-
-
-
-
-
-
WFF840B
Type Max
-
±100
-
-
-
1
10
-
-
Unit
nA
V
µA
µA
V
0.57
-
V/℃
-
5
V
-
0.75
Ω
6.5
-
S
790 1030
24
30
pF
130
170
65
140
18
15
ns
64
125
93
195
28
35
nC
4
-
15
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=9A,VGS=0V
Reverse recovery time
trr
IDR=9A,VGS=0V,
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
Min Type Max Unit
-
-
9
A
-
-
36
A
-
-
1.4
V
-
335
-
ns
-
2.95
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=8mH IAS=9A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤9A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, all for your advance
Share Link: 