WFF840 Ver la hoja de datos (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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WFF840 Datasheet PDF : 7 Pages
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WFF840
Silicon N-Channel MOSFET
Features
■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 48nC)
■Fast Switching Capability
■ 100%Avalanche Tested
■ Isolation Voltage ( VISO = 4000V AC )
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planarstripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction bridge and full bridge resonant topology line a and half
electronic lamp ballast.
G
D
S TO220F
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
Derating Factor above 25℃
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
*Drain current limited by junction temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
500
8*
5.1*
32*
±30
320
13.4
3.5
44
0.35
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
-
-
2.84
-
0.5
-
-
-
62
Rev. C Nov.2008
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Units
℃/W
℃/W
℃/W
T03-1
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