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WF128K16-70CC5 Ver la hoja de datos (PDF) - Unspecified

Número de pieza
componentes Descripción
Fabricante
WF128K16-70CC5
ETC1
Unspecified ETC1
WF128K16-70CC5 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
WF128K16, WF256K16-XCX5
ABSOLUTE MAXIMUM RATINGS (1)
Parameter
Operating Temperature
Supply Voltage Range (VCC)
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
Endurance (write/erase cycles) Mil Temp
A9 Voltage for sector protect (VID) (3)
Unit
-55 to +125
°C
-2.0 to +7.0
V
-2.0 to +7.0
V
-65 to +150
°C
+300
°C
10 years
10,000 cycles min.
-2.0 to +14.0
V
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is VCC + 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9
is +13.5V which may overshoot to 14.0 V for periods up to 20ns.
CAPACITANCE
(TA = 25°C)
Test
Symbol
Conditions
OE capacitance
COE VIN = 0 V, f = 1.0 MHz
WE capacitance
CWE VIN = 0 V, f = 1.0 MHz
CS capacitance
CCS VIN = 0 V, f = 1.0 MHz
I/O0-7 capacitance
CI/O VI/O = 0 V, f = 1.0 MHz
Address capacitance
CAD VIN = 0 V, f = 1.0 MHz
This parameter is guaranteed by design but not tested.
Max Unit
50 pF
50 pF
30 pF
30 pF
50 pF
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.0 VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
A9 Voltage for Sector Protect VID
11.5
12.5
V
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Symbol
Conditions
128K x 16
Min
Max
256K x 16
Unit
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
10
µA
Output Leakage Current
ILO
VCC = 5.5, VIN = GND to VCC
10
10
µA
VCC Active Current for Read (1)
ICC1
CS = VIL, OE = VIH
70
80
mA
7
VCC Active Current for Program
or Erase (2)
VCC Standby Current
ICC2
CS = VIL, OE = VIH
ICC3
VCC = 5.5, CS = VIH, f = 5MHz
100
110
mA
6
8
mA
Output Low Voltage
VOL
IOL = 12.0 mA, VCC = 4.5
0.45
0.45
V
Output High Voltage
Output High Voltage
VOH1
VOH2
IOH = -2.5 mA, VCC = 4.5
IOH = -100 µA, VCC = 4.5
0.85xVcc
0.85xVcc
V
VCC -0.4
VCC -0.4
V
Low VCC Lock Out Voltage
VLKO
3.2
3.2
V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
White Microelectronics • Phoenix, AZ • (602) 437-1520
2

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