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WED2ZL361MV

1Mx36 Synchronous Pipeline Burst NBL SRAM

White Electronic Designs Corporation 

White Electronic Designs

WED2ZL361MV

FUNCTION DESCRIPTION

The WED2ZL361MV is an NBL SSRAM designed to

sustain 100% bus bandwidth by eliminating turnaround

cycle when there is transition from Read to Write, or vice

versa. All inputs (with the exception of OE#, LBO and ZZ)

are synchronized to rising clock edges.

All read, write and deselect cycles are initiated by the

ADV# input. Subsequent burst addresses can be internally

generated by the burst advance pin (ADV#). ADV# should

be driven to Low once the device has been deselected in

order to load a new address for next operation.

Clock Enable (CKE) pin allows the operation of the chip to

be suspended as long as necessary. When CKE is high,

all synchronous inputs are ignored and the internal device

registers will hold their previous values. NBL SSRAM

latches external address and initiates a cycle when CKE

and ADV are driven low at the rising edge of the clock.

Output Enable (OE) can be used to disable the output at

any given time. Read operation is initiated when at the

rising edge of the clock, the address presented to the

address inputs are latched in the address register, CKE is

driven low, the write enable input signals WE# are driven

high, and ADV# driven low. The internal array is read

between the first rising edge and the second rising edge

of the clock and the data is latched in the output register.

At the second clock edge the data is driven out of the

SRAM. During read operation OE# must be driven low for

the device to drive out the requested data.

Write operation occurs when WE# is driven low at the rising

edge of the clock. BW#[d:a] can be used for byte write

operation. The pipe-lined NBL SSRAM uses a late-late

write cycle to utilize 100% of the bandwidth. At the first

rising edge of the clock, WE# and address are registered,

and the data associated with that address is required two

cycle later.

Subsequent addresses are generated by ADV High for

the burst access as shown below. The starting point of the

burst seguence is provided by the external address. The

burst address counter wraps around to its initial state upon

completion. The burst sequence is determined by the state

of the LBO pin. When this pin is low, linear burst sequence

is selected. And when this pin is high, Interleaved burst

sequence is selected.

During normal operation, ZZ must be driven low. When ZZ

is driven high, the SRAM will enter a Power Sleep Mode

after 2 cycles. At this time, internal state of the SRAM is

preserved. When ZZ returns to low, the SRAM operates

after 2 cycles of wake up time.

BURST SEQUENCE TABLE

(Interleaved Burst, LBO = High)

Case 1 Case 2 Case 3 Case 4

LBO Pin High

First Address

A1 A0 A1 A0 A1 A0 A1 A0

00011011

01001110

LBO Pin High

First Address

Fourth Address

10110001

11100100

Fourth Address

(Linear Burst, LBO = Low)

Case 1 Case 2 Case 3 Case 4

A1 A0 A1 A0 A1 A0 A1 A0

00011011

01101100

10110001

11000110

NOTE 1: LBO pin must be tied to High or Low, and Floating State must not be allowed.

June 2004

Rev. 3

2

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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