W9425G6JH Ver la hoja de datos (PDF) - Winbond

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componentes Descripción

Fabricante

W9425G6JH

4M X 4 BANKS X 16 BITS DDR SDRAM

Winbond 

W9425G6JH

1. GENERAL DESCRIPTION

W9425G6JH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR

SDRAM), organized as 4,194,304 words  4 banks  16 bits. W9425G6JH delivers a data bandwidth

of up to 500M words per second (-4). To fully comply with the personal computer industrial standard,

W9425G6JH is sorted into the following speed grades: -4, -5, -5I and -5A. The -4 grade parts is

compliant to the DDR500/CL3 and CL4 specification. The -5/-5I/-5A grade parts are compliant to the

DDR400/CL3 specification (the -5I industrial grade, -5A automotive grade which is guaranteed to

support -40°C ~ 85°C).

All Input reference to the positive edge of CLK (except for DQ, DM and CKE). The timing reference

point for the differential clock is when the CLK and CLK signals cross during a transition. Write and

Read data are synchronized with the both edges of DQS (Data Strobe).

By having a programmable Mode Register, the system can change burst length, latency cycle,

interleave or sequential burst to maximize its performance. W9425G6JH is ideal for main memory in

high performance applications.

2. FEATURES

 2.5V ± 0.2V Power Supply for DDR400

 2.4V~2.7V Power Supply for DDR500

 Up to 250 MHz Clock Frequency

 Double Data Rate architecture; two data transfers per clock cycle

 Differential clock inputs (CLK and CLK )

 DQS is edge-aligned with data for Read; center-aligned with data for Write

 CAS Latency: 2, 2.5, 3 and 4

 Burst Length: 2, 4 and 8

 Auto Refresh and Self Refresh

 Precharged Power Down and Active Power Down

 Write Data Mask

 Write Latency = 1

 7.8µS refresh interval (8K/64 mS refresh)

 Maximum burst refresh cycle: 8

 Interface: SSTL_2

 Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant

3. ORDER INFORMATION

PART NUMBER

W9425G6JH-4

W9425G6JH-5

W9425G6JH-5I

W9425G6JH-5A

SPEED

DDR500/CL3 and CL4

DDR400/CL3

DDR400/CL3

DDR400/CL3

SELF REFRESH

CURRENT (MAX.)

2 mA

2 mA

2 mA

2 mA

OPERATING

TEMPERATURE

0°C ~ 70°C

0°C ~ 70°C

-40°C ~ 85°C

-40°C ~ 85°C

Publication Release Date: Aug. 27, 2013

-4-

Revision A03

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