VBT3080S-E3/8W Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
VBT3080S-E3/8W Datasheet PDF : 6 Pages
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VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
Resistive or Inductive Load
30
V(B,I)T3080S
25
20
VFT3080S
15
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
TA = 25 °C
0.01
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
30
D = 0.5 D = 0.8
25
D = 0.3
D = 0.2
20
D = 0.1
D = 1.0
15
T
10
5
D = tp/T
tp
0
0
5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
TA = 150 °C
10 TA = 125 °C
1
TA = 100 °C
0.1
0
TA = 25 °C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
Junction to Case
1
VFT3080S
V(B,I)T3080S
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 16-Mar-18
3
Document Number: 89169
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