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VSKH91/04 Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción
Fabricante
VSKH91/04 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
VSKT91.., VSKH91.., VSKL91.., VSKN91.. Series
ADD-A-PAK Generation VII Power Modules Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor, 95 A
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
SYMBOL
PGM
PG(AV)
IGM
- VGM
VGT
IGT
VGD
IGD
TEST CONDITIONS
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
Anode supply = 6 V
resistive load
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
Anode supply = 6 V
resistive load
TJ = 125 °C, rated VDRM applied
TJ = 125 °C, rated VDRM applied
VALUES
12
3.0
3.0
10
4.0
2.5
1.7
270
150
80
0.25
6
UNITS
W
A
V
mA
V
mA
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
SYMBOL
IRRM,
IDRM
TEST CONDITIONS
TJ = 125 °C, gate open circuit
Maximum RMS insulation voltage
VINS
50 Hz
Maximum critical rate of rise of off-state voltage dV/dt TJ = 125 °C, linear to 0.67 VDRM
VALUES
15
3000 (1 min)
3600 (1 s)
1000
UNITS
mA
V
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction operating and storage
temperature range
TJ, TStg
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
Typical thermal resistance,
case to heatsink per module
RthCS Mounting surface flat, smooth and greased
VALUES
- 40 to 125
UNITS
°C
0.22
°C/W
0.1
Mounting torque ± 10 %
to heatsink
busbar
A mounting compound is recommended and
4
the torque should be rechecked after a period of
Nm
3 hours to allow for the spread of the compound.
3
Approximate weight
75
g
2.7
oz.
Case style
JEDEC
TO-240AA compatible
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
180°
120°
90°
60°
30°
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
VSK.91..
0.04
0.048 0.063 0.085 0.125
0.033
0.052
0.067
0.088
0.127
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
°C/W
Document Number: 94632 For technical questions within your region, please contact one of the following:
Revision: 17-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3

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