DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

VSK.250PBF Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
VSK.250PBF Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 170 A/250 A
5000
4500
4000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
3500
3000
2500
VSK.170.. Series
Per Junction
2000
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
5000
4500
4000
3500
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained .
Initial TJ = 130°C
No Voltage Reapplied
Rated VRRM Reapplied
3000
2500
VSK.170.. Series
Per Junction
2000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
400
180°
350
120°
90°
300
60°
30°
250
200 Conduction Angle
150
0.25 0.2 K/ W
0.3
K/
K/
W
W
0.35 K/W
100
50
0
0
VSK.170.. Series
Per Module
TJ = 130°C
50 100 150 200 250 300 350 400 20 40 60 80 100 120
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
1000
900
800
700
600
500
400
300
200
100
0
0
180°
(Sine)
180°
(Rect)
2 x VSK.170.. Series
Single Phase Bridge
Connected
TJ = 130°C
0.1
0.08
K/ W
K/
W
0.01.612K/KW/ W
0.2 K/ W
0.25 K/ W
0.35 K/ W
50 100 150 200 250 300 3050 20 40 60 80 100 120
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
Document Number: 94417 For technical questions within your region, please contact one of the following:
Revision: 02-Jul-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]