VSKT105-08 Ver la hoja de datos (PDF) - Vishay Semiconductors

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VSKT105-08

ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 105 A

Vishay Semiconductors 

VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series

ADD-A-PAK Generation VII Power Modules Vishay Semiconductors

Thyristor/Diode and Thyristor/Thyristor, 105 A

TRIGGERING

PARAMETER

Maximum peak gate power

Maximum average gate power

Maximum peak gate current

Maximum peak negative gate voltage

Maximum gate voltage required to trigger

Maximum gate current required to trigger

Maximum gate voltage that will not trigger

Maximum gate current that will not trigger

SYMBOL

PGM

PG(AV)

IGM

- VGM

VGT

IGT

VGD

IGD

TEST CONDITIONS

TJ = - 40 °C

TJ = 25 °C

TJ = 125 °C

Anode supply = 6 V

resistive load

TJ = - 40 °C

TJ = 25 °C

TJ = 125 °C

Anode supply = 6 V

resistive load

TJ = 125 °C, rated VDRM applied

TJ = 125 °C, rated VDRM applied

VALUES

12

3

3

10

4.0

2.5

1.7

270

150

80

0.25

6

UNITS

W

A

V

mA

V

mA

BLOCKING

PARAMETER

Maximum peak reverse and off-state

leakage current at VRRM, VDRM

SYMBOL

IRRM,

IDRM

TEST CONDITIONS

TJ = 130 °C, gate open circuit

Maximum RMS insulation voltage

VINS

50 Hz

Maximum critical rate of rise of off-state voltage dV/dt TJ = 130 °C, linear to 0.67 VDRM

VALUES

20

3000 (1 min)

3600 (1 s)

1000

UNITS

mA

V

V/μs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Junction operating temperature range

TJ

Storage temperature range

Maximum internal thermal resistance,

junction to case per leg

TStg

RthJC

DC operation

Typical thermal resistance,

case to heatsink per module

Mounting torque ± 10 %

RthCS

to heatsink

busbar

Mounting surface flat, smooth and greased

A mounting compound is recommended and

the torque should be rechecked after a period

of 3 hours to allow for the spread of the

compound.

Approximate weight

Case style

JEDEC

VALUES

- 40 to 130

UNITS

°C

0.22

°C/W

0.1

4

Nm

3

75

g

2.7

oz.

TO-240AA compatible

ΔR CONDUCTION PER JUNCTION

DEVICES

SINE HALF WAVE CONDUCTION

180°

120°

90°

60°

30°

VSK.105..

0.04

0.048 0.063 0.085 0.125

RECTANGULAR WAVE CONDUCTION

180°

120°

90°

60°

30°

0.033

0.052

0.067

0.088

0.127

Note

• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

UNITS

°C/W

Document Number: 94628 For technical questions within your region, please contact one of the following:

Revision: 17-May-10

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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