VSKJ236-04PBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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VSKJ236-04PBF
Vishay Semiconductors
VSKJ236-04PBF Datasheet PDF : 13 Pages
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VSK.166..PbF, VSK.196..PbF, VSK.236..PbF Series
Standard Recovery Diodes, 165 A to 230 A Vishay Semiconductors
(INT-A-PAK Power Modules)
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
180° 120° 90°
60°
30°
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
180° 120°
90°
60°
30°
VSK.166
0.025 0.03 0.038 0.055 0.089 0.018 0.031 0.041 0.057 0.089
VSK.196
0.016 0.019 0.024 0.034 0.053 0.012 0.02 0.026 0.035 0.054
VSK.236
0.009 0.010 0.014 0.018 0.025 0.008 0.012 0.015 0.019 0.025
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
150
VSK.166.. Series
140
RthJC (DC) = 0.20 K/W
130
Ø
120
Conduction angle
110
100
30°
60°
90
90°
120°
80
180°
70
0
40
80
120
160
200
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
150
VSK.166.. Series
140
RthJC (DC) = 0.20 K/W
130
Ø
120
Conduction period
110
100
90
80
70
0
30°
60°
90°
120°
180°
DC
50 100 150 200 250 300
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
250
180°
120°
200
90°
60°
30°
150
RMS limit
100
Ø
Conduction angle
50
VSK.166.. Series
TJ = 150 °C
0
0
40
80
120
160
200
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
300
DC
180°
250
120°
90°
200
60°
30°
RMS limit
150
Ø
100
Conduction period
50
0
0
VSK.166.. Series
Per junction
TJ = 150 °C
50 100 150 200 250 300
Average Forward Current (A)
Fig. 4 - On-State Power Loss Characteristics
Document Number: 94357 For technical questions within your region, please contact one of the following:
Revision: 20-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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